Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment
نویسندگان
چکیده
منابع مشابه
Hydrogen sensors based on AlGaN/AlN/GaN HEMT
Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...
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ژورنال
عنوان ژورنال: Results in Physics
سال: 2019
ISSN: 2211-3797
DOI: 10.1016/j.rinp.2018.11.064